Optical IC
文献类型：专利
| 作者 | NAKAO ICHIRO |
| 发表日期 | 1986-03-01 |
| 专利号 | JP1986042982A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical IC |
| 英文摘要 | PURPOSE:To contrive yield improvement and speed-up by a method wherein a semiconductor laser and a bi-polar transistor are integrated on the same substrate at a time of epitaxial growth without an interposal of other processes between multilayer epitaxial growths. CONSTITUTION:The title device is composed of a semi-insulation InP substrate 21, an N-InP clad layer 22, an N-InGaAsP active layer 23, an N-InP clad layer 24, a P-InP layer 25, and an N-InP layer 26. The semiconductor laser part L is made of a Zn-doped region 27 and constructs a laser of such a type that current flows as shown by broken lines 30 and that the clad layers 22 and 24 confine light and current, resulting in oscillation at the interface of the P type Zn diffused region 27 in the active layer 23. The electric element part T is made of an emitter layer 26, a base layer 25, and collector layers 22, 23, and 24, thus constructing a hetero bi-polar transistor. Since this construction enables the semiconductor laser and the electric element to be integrated at a time of epitaxial growth, this device can be speeded up with good yield and the reduction in collector resistance. |
| 公开日期 | 1986-03-01 |
| 申请日期 | 1984-08-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77659]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NAKAO ICHIRO. Optical IC. JP1986042982A. 1986-03-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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