Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | UOMI KAZUHISA; ONO YUICHI; NAKATSUKA SHINICHI; KAYANE NAOKI; KAJIMURA TAKASHI; KONO TOSHIHIRO |
| 发表日期 | 1987-02-20 |
| 专利号 | JP1987039084A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain the semiconductor laser device of low noise without astigmatism by forming an internal current constriction region on a substrate and arranging a step part in only the part of laser end plane to grow a double hetero structure. CONSTITUTION:On an N-GaAs substrate crystal 1, an SiNx film mask 2 having different stripe widths is formed and an internal current constriction region 3 is formed by Zn diffusion. By using the SiNx film 2 as a mask, only the stripe part near the end plane is etched. The SiNx film 2 is removed and an N-GaAs buffer layer 4, an N-Ga0.5Al0.5As cladding layer 5, an undoped Ga0.86 Al0.14As active layer 6, a P-Ga0.5Al0.5As cladding layer 7 and a P-GaAs layer 8 are grown in order by MOCVD technique. Electrodes 9 and 10 are formed and are cleaved into a resonator length. For the internal current constriction region 3, the ion implantation of Be, Mg, Si or Se besides Zn is available. |
| 公开日期 | 1987-02-20 |
| 申请日期 | 1985-08-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77661]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | UOMI KAZUHISA,ONO YUICHI,NAKATSUKA SHINICHI,et al. Semiconductor laser device and manufacture thereof. JP1987039084A. 1987-02-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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