Semiconductor light emitting element
文献类型：专利
| 作者 | OKUDA HIROSHI |
| 发表日期 | 1986-10-11 |
| 专利号 | JP1986228684A |
| 著作权人 | SUMITOMO ELECTRIC IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To prevent position deviation due to the diffusion of impurities at a P-N junction and to make it possible to obtain high speed response and a high-power emitted light output, by setting the carrier concentration of an active layer, which is formed between a first clad layer in an N-type region, and a second clad layer formed in a P-type region, at a value larger than those of the first and second clad layers. CONSTITUTION:An active layer is made to be an N-type region. The carrier concentration of the active layer is made larger than the carrier concentration of first and second clad layers 2 and 4. For example, on an N-type InP substrate 1 having a concentration of Te 1X10cm, the following layers are sequentially formed by a liquid phase epitaxial growing method: an N-type InP clad layer 2 having a concentration of Te 1X10cm; an N-type InGaAsP active layer 3 having a concentration of Te 5X10cm; a P-type InP clad layer 4 having a concentration of Zn 1X10cm; and a P-type InGaAsP contact layer 5 having a concentration of Zn 3X10cm. In this way, Te, which is the N-type impurities, is added in the active layer 3, and the P-N junction is formed at an interface between the active layer 3 and the P-type clad layer 4. The carrier concentration of the P-type clad layer 4 is decreased to 1X10cm. Thus the occurrence of a tunnel phenomenon is prevented. |
| 公开日期 | 1986-10-11 |
| 申请日期 | 1985-04-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77673]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC IND LTD |
| 推荐引用方式 GB/T 7714 | OKUDA HIROSHI. Semiconductor light emitting element. JP1986228684A. 1986-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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