Manufacture of semiconductor laser
文献类型：专利
| 作者 | KITAMURA MITSUHIRO; SASAKI TATSUYA; YAMADA HIROHITO |
| 发表日期 | 1989-07-17 |
| 专利号 | JP1989179485A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To decrease growth processes in number so as to decrease a laser of this design in cost by a method wherein two grooves are formed in a multilayer film formed on a substrate to build a stripe-like multilayer structure, and then a block layer and others are constructed on both sides of the structure. CONSTITUTION:A multilayer film composed of a buffer layer 2, an active layer 3, a clad layer 4, and an electrode layer 5 is formed on a semiconductor substrate Next, two grooves 9 as deep as penetrating the active layer 3 are provided to both the sides of a region which is to be a mesa stripe. Then, etching is performed so as to reach to the clad layer 4 above the active layer 3 positioned at the outside of the grooves 9 for the formation of a mesa stripe- like multilayer structure 8. Next, current block layers 10 and 11 and a buried layer 12 different from the mesa structure in conductivity type are formed on the face other than the upper face of the above mesa structure 8. Lastly, electrodes 13 and 14 are built. |
| 公开日期 | 1989-07-17 |
| 申请日期 | 1988-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77681]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KITAMURA MITSUHIRO,SASAKI TATSUYA,YAMADA HIROHITO. Manufacture of semiconductor laser. JP1989179485A. 1989-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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