Semiconductor laser
文献类型：专利
| 作者 | OKADA TSUNEICHI; SAKAMOTO MASAMICHI |
| 发表日期 | 1986-03-14 |
| 专利号 | JP1986051889A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain both an index guide type semiconductor laser and a gain guide type semiconductor laser positively while arbitrarily designing a semiconductor laser, to which both guide functions are formed partially, or a semiconductor laser having an intermediate function or the like easily by each shaping an optical absorption function and a current constriction function by different layers. CONSTITUTION:A first clad layer 12 consisting of AlzGa1-zAs having the same conduction type as an N type GaAs semiconductor substrate 11, a P type or N type active layer 13 composed of AlxGa1-xAs on the clad layer 12, a second clad layer 14 consisting of AlzGa1-zAs having a conduction type different from the first clad layer such as a P type on the active layer 13, and a cap layer 16 composed of a high-concentration GaAs layer having the same conduction type as the clad layer 14 such as the P type are formed onto the substrate 1 An optical absorption layer 21 consisting of AlyGa1-yAs having the same conduction type as the second clad layer such as the P type on the side, particularly, the side facing the active layer 13, and a current constriction layer 22 composed of AliGa1-iAs having a conduction type different from the second clad layer 14 such as the P type on the side reverse to the side facing the active layer 13 on the layer 21 are laminated and shaped in the second clad layer 14. |
| 公开日期 | 1986-03-14 |
| 申请日期 | 1984-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77683]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | OKADA TSUNEICHI,SAKAMOTO MASAMICHI. Semiconductor laser. JP1986051889A. 1986-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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