Semiconductor light-emitting device
文献类型：专利
| 作者 | AKITA KENZOU; TANAHASHI TOSHIYUKI |
| 发表日期 | 1983-08-01 |
| 专利号 | JP1983128783A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To obtain the semiconductor light-emitting device which performs current constriction by forming an InGaAsP/InP double hetero-junction into a groove penetrating a current interrupting layer. CONSTITUTION:An undoped Al0.48In0.52As layer 12, a lattice constant thereof agrees with InP, is formed onto a substrate 11 made of an n-InP crystal in thickness such as approximately 2mum through an epitaxial method. The groove 13, which has a V-shaped section, which penetrates the layer 12 and reaches the substrate 11, and extends in the direction of the crystal, is formed. An n- InP clad layer 14 is formed in thickness such as approximately 3mum onto the deepest section of the groove 13, an undoped InGaAsP active layer 15 in thickness such as approximately 0.2mum at the center onto the layer 14, a p-InP clad layer 16 in thickness such as approximately 5mum in sections except the groove 13 and a p-InGa cap layer 17 in approximately 1mum thickness in succession into the groove 13 through a liquid epitaxial growth method. |
| 公开日期 | 1983-08-01 |
| 申请日期 | 1982-01-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77704]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | AKITA KENZOU,TANAHASHI TOSHIYUKI. Semiconductor light-emitting device. JP1983128783A. 1983-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。