Semiconductor laser
文献类型：专利
| 作者 | NAKAMURA AKIRA; SUGINO TAKASHI; YOSHIKAWA AKIO; KUME MASAHIRO; HIROSE MASANORI; YAMAMOTO ATSUYA |
| 发表日期 | 1989-09-04 |
| 专利号 | JP1989220882A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To efficiently implant carriers in an active layer through clad layers, whose conductivity types are different from each other, and to make possible an oscillation in a fundamental transverse mode at a low threshold current value by a method wherein the active layer is pinched by these clad layers and furthermore, a striped highresistance region is formed. CONSTITUTION:When a forward voltage is applied to both electrodes 6 and 7, electrons and holes are respectively injected in an active layer 3 through an N-type clad layer 4 and through a P-type clad layer 2 and a P-type region 8 and are recombined to generate a laser oscillation. In such a way, as the carriers are injected in the layer 3 through the upper and low clad layers 2 and 4, the recombination of the electrons and the holes is generated efficiently regardless of the stripe width of the layer 3. Moreover, the refractive index of the striped multi quantum well type active layer 3 is larger than that of an AlGaAs layer formed into a mixed crystal and light is confined in the layer 3 of the stripe width W. As a result, an oscillation in a fundamental mode is performed at a low threshold current value. Moreover, as a striped high- resistance region 9 is formed, a current, which is made to flow between both electrodes 6 and 7, is all injected in the layer 3 and the injection is useful for a reduction in a threshold current value. |
| 公开日期 | 1989-09-04 |
| 申请日期 | 1987-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77707]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NAKAMURA AKIRA,SUGINO TAKASHI,YOSHIKAWA AKIO,et al. Semiconductor laser. JP1989220882A. 1989-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。