A semiconductor laser device
文献类型：专利
| 作者 | SUYAMA, TAKAHIRO; TAKAHASHI, KOHSEI; YAMAMOTO, SABURO; HAYAKAWA, TOSHIRO; KONDO, MASAFUMI |
| 发表日期 | 1988-07-20 |
| 专利号 | EP0217627A3 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | A semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprising a laser oscillation-operating area containing a first cladding layer (2), an active layer (3), an optical guiding layer (4) and a second cladding layer (8) in that order, wherein a striped impurity-diffusion region (10) is formed into said second cladding layer (8) from one facet to the other facet and a plurality of narrow strips of GaAs with a spaced pitch are formed parallel to both facets in the region, except for the reg ion corresponding to said striped diffusion region (10), which is positioned at the interface between the optical guiding layer (4) and the second cladding layer (8). |
| 公开日期 | 1988-07-20 |
| 申请日期 | 1986-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77734]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SUYAMA, TAKAHIRO,TAKAHASHI, KOHSEI,YAMAMOTO, SABURO,et al. A semiconductor laser device. EP0217627A3. 1988-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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