Nitride semiconductor laser device
文献类型：专利
| 作者 | GOTO, TAKENORI; HAYASHI, NOBUHIKO |
| 发表日期 | 2003-02-18 |
| 专利号 | US6522676 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor laser device |
| 英文摘要 | A nitride semiconductor device of the self-pulsation type comprises as superposed on a substrate 1 an n-type cladding layer 3, active layer 4 and p-type cladding layer including an upwardly projecting stripe portion 53, an n-type current blocking layer 6 being formed at each of opposite sides of the stripe portion 53. The stripe portion 53 of the p-type cladding layer 5 comprises an upper stripe portion 51 and a lower stripe portion 52. The upper stripe portion 51 has a minimum width W1 at the position of the boundary between the upper and lower stripe portions 51, 52, and the lower stripe portion 52 has at the position of its lower end a width W2 greater than the minimum width W1 of the upper stripe portion 5 This construction realizes a higher yield than in the prior art. |
| 公开日期 | 2003-02-18 |
| 申请日期 | 2000-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77749]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | GOTO, TAKENORI,HAYASHI, NOBUHIKO. Nitride semiconductor laser device. US6522676. 2003-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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