Manufacture of semiconductor laser
文献类型:专利
作者 | NEMOTO KAZUHIKO |
发表日期 | 1992-11-05 |
专利号 | JP1992313288A |
著作权人 | ソニー株式会社 |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of semiconductor laser |
英文摘要 | PURPOSE:To efficiently output laser light in the surface direction by forming the surface of a reflecting mirror for outputting laser light of a semiconductor laser in a direction substantially perpendicular to the main surface of a substrate. CONSTITUTION:A groove 2 extended in a reverse mesa direction of a substrate 1 is formed on the substrate 1 having a main surface 1A of a crystal surface in a plane {100}. At least first conductivity type clad layer 4, an active layer 5 and a second conductivity type clad layer 6 are formed on the substrate 1 formed with the groove 2 by a vapor growth method, and oblique surfaces 7A, 7B formed of a surface in a plane {111} to be extended from both edges 3A, 3B of the groove 2 are exposed. Then, one side of the surfaces 7A, 7B is etched to form a vertical surface 8 substantially perpendicular to the main surface 1A of the substrate 1, and a semiconductor laser 10 having the surface 8a as an output end face is formed. Thus, a reflecting mirror nearly ideal mirror surface with very good smoothness can be obtained without damage on the surface of the mirror, and a light emitted from the laser can be efficiently output. |
公开日期 | 1992-11-05 |
申请日期 | 1991-04-10 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/77751] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | ソニー株式会社 |
推荐引用方式 GB/T 7714 | NEMOTO KAZUHIKO. Manufacture of semiconductor laser. JP1992313288A. 1992-11-05. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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