中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Manufacture of semiconductor laser

文献类型:专利

作者NEMOTO KAZUHIKO
发表日期1992-11-05
专利号JP1992313288A
著作权人ソニー株式会社
国家日本
文献子类发明申请
其他题名Manufacture of semiconductor laser
英文摘要PURPOSE:To efficiently output laser light in the surface direction by forming the surface of a reflecting mirror for outputting laser light of a semiconductor laser in a direction substantially perpendicular to the main surface of a substrate. CONSTITUTION:A groove 2 extended in a reverse mesa direction of a substrate 1 is formed on the substrate 1 having a main surface 1A of a crystal surface in a plane {100}. At least first conductivity type clad layer 4, an active layer 5 and a second conductivity type clad layer 6 are formed on the substrate 1 formed with the groove 2 by a vapor growth method, and oblique surfaces 7A, 7B formed of a surface in a plane {111} to be extended from both edges 3A, 3B of the groove 2 are exposed. Then, one side of the surfaces 7A, 7B is etched to form a vertical surface 8 substantially perpendicular to the main surface 1A of the substrate 1, and a semiconductor laser 10 having the surface 8a as an output end face is formed. Thus, a reflecting mirror nearly ideal mirror surface with very good smoothness can be obtained without damage on the surface of the mirror, and a light emitted from the laser can be efficiently output.
公开日期1992-11-05
申请日期1991-04-10
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/77751]  
专题半导体激光器专利数据库
作者单位ソニー株式会社
推荐引用方式
GB/T 7714
NEMOTO KAZUHIKO. Manufacture of semiconductor laser. JP1992313288A. 1992-11-05.

入库方式: OAI收割

来源:西安光学精密机械研究所

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