Method for making a semiconductor device
文献类型：专利
| 作者 | FUJII, NARIAKI; KIMURA, TATSUYA |
| 发表日期 | 1996-08-20 |
| 专利号 | US5547899 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for making a semiconductor device |
| 英文摘要 | In a method of making a semiconductor device, a p-type compound semiconductor layer containing zinc as a dopant impurity and including at least one transition metal element selected from the group consisting of Fe, V, Cr, Mn, Co, and Ni is grown on a second semiconductor layer, the at least one transition metal element inhibiting zinc from diffusing into the second semiconductor layer. A method of making a semiconductor laser includes growing the p-type compound semiconductor layer containing zinc as a cladding layer and the second layer is an undoped compound semiconductor active layer. |
| 公开日期 | 1996-08-20 |
| 申请日期 | 1995-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77758]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | FUJII, NARIAKI,KIMURA, TATSUYA. Method for making a semiconductor device. US5547899. 1996-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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