半導体装置の製造方法
文献类型：专利
| 作者 | 西村 隆司 |
| 发表日期 | 1996-09-05 |
| 专利号 | JP2557546B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体装置の製造方法 |
| 英文摘要 | PURPOSE:To inhibit the abnormal growth of a semiconductor layer generated due to dust, etc., on Si, to decrease the number of surface defects remarkably and to prevent the generation of cracks completely even when the semiconductor layer is formed in film thickness of 5mum or more by holding the thin-films of AlAs and GaAs between Si and the semiconductor layer. CONSTITUTION:Both AlAs 3 and a GaAs layer 2 are grown previously at a low temperature before a GaAs layer 4 is grown at a high temperature, and the high-temperature GaAs layer 4 is grown onto the GaAs layer 2 grown at the low temperature. The AlAs layer 3 is grown first before the low-temperature growth GaAs layer 2 is formed onto an Si substrate 1, but it is because the bonding power of AlAs and Si is higher than that of GaAs and Si. The crystal growth of AlAs onto the Si substrate has the probability of three-dimensional growth remarkably lower than the crystal growth of GaAs, and the surface of an Si crystal can be coated more flatly. According to the constitution, abnormal growth on the surface of the growth of the semiconductor layer is prevented, thus markedly decreasing surface defects. |
| 公开日期 | 1996-11-27 |
| 申请日期 | 1990-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77768]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 西村 隆司. 半導体装置の製造方法. JP2557546B2. 1996-09-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。