Semiconductor laser
文献类型：专利
| 作者 | TOKUDA YASUKI; TSUKADA NORIAKI |
| 发表日期 | 1990-05-07 |
| 专利号 | JP1990119289A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve injection efficiency of a current by providing a quantum fine line of an active layer in a direction which does not intersect at right angles to a laser end face and by injecting a holes and electrons from both ends thereof. CONSTITUTION:A quantum fine line 8 is provided to an active layer 21 between undoped clad layers 22, 23 on a semiconductor insulating substrate 24 in parallel to a laser end face. Holes and electrons injected from electrodes 25, 26 pass through diffusion regions 27, 28 and are injected in the active layer 2 Because of a long distance of micron order between the diffusion regions 27, 28, injected carriers fall into the quantum fine line 8 effectively and recombination is made, thereby reducing carrier which is recombined at an isolation region 9. Injection efficiency of a current can be improved in this way. |
| 公开日期 | 1990-05-07 |
| 申请日期 | 1988-10-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77769]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TOKUDA YASUKI,TSUKADA NORIAKI. Semiconductor laser. JP1990119289A. 1990-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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