Semiconductor laser
文献类型：专利
| 作者 | HIRATA SHOJI; NARUI HIRONOBU |
| 发表日期 | 1991-10-04 |
| 专利号 | JP1991225883A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To eliminate the switching-on of a thyristor caused by a leakage current and thereby improve output characteristics by constructing a title laser as a BH type one where it is surrounded and confined by a current blocking layer, and using a thyristor p-n-p-n double structure successively laminated on a mesa groove. CONSTITUTION:A striped active layer 24 comprises a BH type semiconductor laser structure surrounded and confined by a first conductivity type cladding layer 23, a second conductivity type first cladding layer 25, and a current blocking layer 28. Further, there is constructed a composite thyristor p-n-p-n of a double structure of a thyristor p-n-p-n successively laminated on a mesa groove 31 from the first conductivity type cladding layer 23 to the second type first cladding layer 25. Accordingly, only the striped active layer 24 in a striped epitaxial growth layer 30 can securely be made a lasing operation region. Hereby, a thyristor is prevented from being switching on owing to a leakage current occurring through the current blocking layer to improve the optical output characteristics. |
| 公开日期 | 1991-10-04 |
| 申请日期 | 1990-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77771]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | HIRATA SHOJI,NARUI HIRONOBU. Semiconductor laser. JP1991225883A. 1991-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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