Semiconductor laser element and laser device using the same element
文献类型：专利
| 作者 | MURO, KIYOFUMI; FUJIMOTO, TSUYOSHI; YOSHIDA, YUJI; ISHIZAKA, SHOJI; YAMADA, YOSHIKAZU |
| 发表日期 | 1993-08-06 |
| 专利号 | CA2106562A1 |
| 著作权人 | MITSUI CHEMICALS, INC. |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and laser device using the same element |
| 英文摘要 | A semiconductor laser of this invention, having astructure of an element composed of: carrier block layers, formedbilaterally externally of an active layer in section which isformed in the vertical direction from the surface of the element,for reducing a light guiding function of the active layer; waveguide layers provided bilaterally externally of said carrier blocklayers and clad layers provided so that the wave guide layers aresandwiched in between the clad layers. This invention overcomes adilemma inherent in the conventional weakly guiding laser and LOCstructured laser in terms of designing the device for controllinga guided mode. The present invention also solves the problems interms of attaining higher outputting and a low dispersion of theradiation beams and improving a beam profile. |
| 公开日期 | 1993-08-06 |
| 申请日期 | 1993-02-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77790]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUI CHEMICALS, INC. |
| 推荐引用方式 GB/T 7714 | MURO, KIYOFUMI,FUJIMOTO, TSUYOSHI,YOSHIDA, YUJI,et al. Semiconductor laser element and laser device using the same element. CA2106562A1. 1993-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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