Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | KOUNO TOSHIHIRO; OOTOSHI SOU; KAJIMURA TAKASHI; KAYANE NAOKI; NAKAMURA MICHIHARU |
| 发表日期 | 1984-08-23 |
| 专利号 | JP1984147478A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce the width of an active layer remarkably by making the width of the upper end of a clad layer on the semiconductor substrate side larger than that of the lower end of a clad layer immediately above the active layer. CONSTITUTION:An N-clad layer 2, an N-light guide layer 3, an active layer 4, a P-clad layer 5 and a P-cap layer 6 are grown on an N-substrate 1 in succession. The refractive indices of the layer 2 and the layer 5 are set to values smaller than that of the layer 4 at that time. The refractive index of the layer 3 is set to a value smaller than that of the layer 4 and larger than that of the layer 2. Each layer is etched in the direction of a trapezoid of which the upside is smaller than the downside in a sectional shape. Only the layer 2 and the layer 5 are etched selectively. The exposed section of the exposed layer 4 is removed through etching. Accordingly, since a mesa stripe is formed in the direction of the trapezoid of which the upside is smaller than the downside in the sectional shape, the width of the layer 5 is made narrower than that of the layer 2, and the width of the layer 4 can be reduced extremely. |
| 公开日期 | 1984-08-23 |
| 申请日期 | 1983-02-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77798]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KOUNO TOSHIHIRO,OOTOSHI SOU,KAJIMURA TAKASHI,et al. Semiconductor laser device and manufacture thereof. JP1984147478A. 1984-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。