Semiconductor laser device
文献类型：专利
| 作者 | TODOROKI SATORU; TAKAHASHI TETSUYA |
| 发表日期 | 1985-10-12 |
| 专利号 | JP1985201683A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable to fulfill a good confinement effect of carriers electrically and optically by a method wherein the second semiconductor layer, which has an inverse conductive type to those of the first and third semiconductor layers and has a forbidden band width larger than that of the first semiconductor layer and smaller than that of the third semiconductor layer, is provided in a region other than an area, wherein a groove has been formed. CONSTITUTION:A P type Ga1-XAlXAs current stopping layer 2 having a forbidden band width larger than that of an N type GaAs substrate 1 is laminated on the substrate 1, and after that, a groove 3 as deep as to reach the substrate 1 is formed in the current stopping layer 2. An N type Ga1-YAlYAs clad layer 4 having a forbidden band width larger than that of the current stopping layer 2, an N type or P type Ga1-ZAlZAs active layer 5 having a forbidden band width smaller than that of the clad layer 4, a P type Ga1-YAlYAs clad layer 6 and an N type GaAs layer or an N type Ga1-YAlYAs cap layer 7 are laminated on the current stopping layer 2. Then, a P type diffusion layer 8; which opposes to the groove 3, and moreover, penetrates the cap layer 7 and has a width in the same extent as that of the groove 3; is formed using a thermal diffusion method. |
| 公开日期 | 1985-10-12 |
| 申请日期 | 1984-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77805]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | TODOROKI SATORU,TAKAHASHI TETSUYA. Semiconductor laser device. JP1985201683A. 1985-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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