半導体レーザ素子
文献类型：专利
| 作者 | 茅根 直樹; 魚見 和久; 三島 友義 |
| 发表日期 | 1997-10-03 |
| 专利号 | JP2702964B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子 |
| 英文摘要 | PURPOSE:To obtain a quantum well type semiconductor laser having a wide modulation band for photocommunication and visible rays and having the low threshold current value by making an active layer and a semiconductor layer on both sides of the active layer to contain In and As together with either or both of Ga and Al. CONSTITUTION:After growing an n-type InAlAs clad layer 2 on an n-type InP substrate 1 by a beam growth method, an undoped InGaAs active layer 3 and a p-type InGaAlAs barrier layer 4 are alternately grown. Later, a p-type InAlAs clad layer 5 and a p-type InGaAs cap layer 6 are grown. Next, a p-side electrode 7 and an n-side electrode 8 are formed by evaporation deposition while cutting off an element. By making the density of the impurities doped in the barrier layer 4 of this element 2X10cm, relief oscillation frequency reaches above 30GHz so as to obtain more than double the value as compared with a quantum well type laser undoped with the impurities while oscillating with the laser oscillation wave length of a 2-6mum band or a 0.6-0.7mum band and being able to have a high-speed modulation limit, or the low threshold current value. |
| 公开日期 | 1998-01-26 |
| 申请日期 | 1988-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77811]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 茅根 直樹,魚見 和久,三島 友義. 半導体レーザ素子. JP2702964B2. 1997-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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