Laser diode
文献类型：专利
| 作者 | TAKAMIYA SABUROU; HORIUCHI SHIGEKI; OOTAKI KANAME; YAMANAKA KENICHI |
| 发表日期 | 1982-03-23 |
| 专利号 | JP1982049292A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode |
| 英文摘要 | PURPOSE:To obtain a stable oscillation mode of laser diode by forming two parallel V-shaped grooves form one major surface such that the bottoms of these grooves reach the clad layer while maintaining a distance of less than 10mum between these bottoms and forming a diffusion layer of the same conductivity type as the clad layer along the inner surfaces of the grooves. CONSTITUTION:A P tyupe diffusion layer 8a formed along the V-shaped grooves 15a and 15b contacts with a P type AlGaAs clad layer 5 at two points, so that the carrier density distribution in the GaAs active layer 4 appears as the sum of two distributions. Therefore, the distribution curve has a central depression even if the laser beam is not so strong. The refraction distrivution curve exhibits a peak at the valley part where the carrier density is high and depressions at two ridge part. Therefore, the laser beam is automatically concentrated to the position of the valley and the osillation takes place along the wave guide path where the laser beam is concentrated. The distance between the bottoms of the V-shaped grooves is to be maintained 10mum or less due to the overlaping of the carrier density sidtribution. According to this arrangement, it is possible to obtain a stable oscillation mode without necessitating any specific wave guide path which is complicated and difficult to form. |
| 公开日期 | 1982-03-23 |
| 申请日期 | 1980-09-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77815]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAKAMIYA SABUROU,HORIUCHI SHIGEKI,OOTAKI KANAME,et al. Laser diode. JP1982049292A. 1982-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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