Integrated semiconductor laser
文献类型：专利
| 作者 | MAKIUCHI MASAO; FURUYA AKIRA; WADA OSAMU |
| 发表日期 | 1988-03-11 |
| 专利号 | JP1988056978A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated semiconductor laser |
| 英文摘要 | PURPOSE:To realize high speed operation and obtain a large output, by integrat ing many transversal injection lasers in which quantum well structure serves as an active layer, and forming P and N electrodes in the manner in which the active layer is sandwiched between high resistance layers and has a mini mum volume. CONSTITUTION:An HR-AlGaAs clad layer 4, an active layer 5 of MQW struc ture and an HR-AlGaAs clad layer 3 are grown in order on an SI-GaAs sub strate 6. Two N-type regions 2 are formed by diffusing Si, and three P-type regions 1 are formed by diffusing Zn. Thus four transversal injection lasers are formed on the fine area of a substrate. In this manner, several number of elements are horizontally and vertically integrated, so that a laser of high speed and large output can be obtained. |
| 公开日期 | 1988-03-11 |
| 申请日期 | 1986-08-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77821]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MAKIUCHI MASAO,FURUYA AKIRA,WADA OSAMU. Integrated semiconductor laser. JP1988056978A. 1988-03-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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