Semiconductor device and manufacture thereof
文献类型：专利
| 作者 | IMANAKA KOICHI; SATO FUMIHIKO |
| 发表日期 | 1989-10-02 |
| 专利号 | JP1989246888A |
| 著作权人 | OMRON TATEISI ELECTRON CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To realize a gas trapping effect and a distortion removing effect so as to improve a semiconductor device in quality by a method wherein a buffer layer used for an epitaxial growth is composed of two kinds of super lattices such as a lattice matching super lattice and a lattice mismatching super lattice. CONSTITUTION:When a semiconductor device section 10 is formed on a semiconductor substrate 1 through an epitaxial growth, a first super lattice buffer layer 3 and a second super lattice buffer layer 5 are provided between an active section 7 of the semiconductor device and the substrate The first super lattice layer 3 is formed in such a manner that two kinds of semiconductor films are alternately grown to form two or more pairs of them, where one of them is a film which is not lattice-matched with the substrate The second super lattice buffer layer 5 is composed of two kinds of semiconductor films which are both nearly lattice-matched with the substrate 1 in such a manner that they are alternately grown to form two or more pairs of them. By these processes, a gas trapping effect and a distortion removing effect are realized to improve a semiconductor device in quality. |
| 公开日期 | 1989-10-02 |
| 申请日期 | 1988-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77835]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRON CO |
| 推荐引用方式 GB/T 7714 | IMANAKA KOICHI,SATO FUMIHIKO. Semiconductor device and manufacture thereof. JP1989246888A. 1989-10-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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