Semiconductor light emitting device
文献类型：专利
| 作者 | SAITO, SHINJI; HWANG, JONGIL; NUNOUE, SHINYA |
| 发表日期 | 2013-09-03 |
| 专利号 | US8526477 |
| 著作权人 | ALPAD CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer. |
| 公开日期 | 2013-09-03 |
| 申请日期 | 2011-02-24 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77839]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ALPAD CORPORATION |
| 推荐引用方式 GB/T 7714 | SAITO, SHINJI,HWANG, JONGIL,NUNOUE, SHINYA. Semiconductor light emitting device. US8526477. 2013-09-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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