Semiconductor laser
文献类型：专利
| 作者 | UCHIDA, TORU, C/O FUJITSU LIMITED; ANAYAMA, CHIKASHI, C/O FUJITSU LIMITED; YAMAZAKI, SUSUMU, C/O FUJITSU LIMITED; KURAKAKE, HIROHIDE, C/O FUJITSU LIMITED; KURAMATA, AKITO, C/O FUJITSU LIMITED; SODA, HARUHISA, C/O FUJITSU LIMITED |
| 发表日期 | 1994-09-21 |
| 专利号 | EP0616400A2 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | The group III-V compound semiconductor laser can emit light in a 3 µm band or a 55 µm, and has a laser structure including an active layer (5) for emitting light, guide layers (6) sandwiching the active layer and having a band gap larger than the active layer, and clad layers (7) embracing the guide layers and having a band gap larger than the guide layers. The lattice constants of the guide layers and clad layers are larger than a1 by 0.5 % or more and smaller than a2 by 0.5 % or more, where a1 represents the lattice constant of GaAs and a2 is the lattice constant of InP. The semiconductor laser of a 1 µm band having an excellent conversion efficiency and a high characteristic temperature. |
| 公开日期 | 1994-09-21 |
| 申请日期 | 1994-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77845]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | UCHIDA, TORU, C/O FUJITSU LIMITED,ANAYAMA, CHIKASHI, C/O FUJITSU LIMITED,YAMAZAKI, SUSUMU, C/O FUJITSU LIMITED,et al. Semiconductor laser. EP0616400A2. 1994-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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