Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI |
| 发表日期 | 1990-03-23 |
| 专利号 | JP1990082678A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To enable the regrowth without exposing a layer containing a comparatively large amount of Al and moreover to enable the operation by the same operation principle as that of SAS lasers, by forming a conductivity-type, second clad layer made of a compound semiconductor containing Al inside a stripe groove and an antiwaveguide layer. CONSTITUTION:A semiconductor laser consists of an n-GaAs substrate 11, an n-GaAs buffer layer 12, an n-AlGaInP clad layer 13, an undoped InGaP layer 14, the first p-AlGaInP clad layer 15, a p-InGaP cap layer 16, a GaAs etching stop layer 17, an n-InGaP antiwaveguide layer 18, the second p-AlGaInP clad layer 21, and a p-GaAs layer 22. That is, the InGaP cap layer 16 with a very thin thickness of 0.01-0.03mum or so, for example, and GaAs etching-stop layer 17 with a thickness of 0.04-0.06mum or so have been provided between the first p-AlGaInP clad layer 15 and the n-InGaP antiwavelength layer 18. And, the first p-AlGaInP clad layer 15 containing a comparatively large amount of Al is formed in a state of not being exposed to the surface through the regrowing process. This makes it possible to obtain semiconductor lasers which operate by a similar operation principle to that of SAS lasers. |
| 公开日期 | 1990-03-23 |
| 申请日期 | 1988-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77847]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI. Manufacture of semiconductor light emitting device. JP1990082678A. 1990-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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