Semiconductor laser device
文献类型：专利
| 作者 | YANO MORICHIKA; HAYASHI HIROSHI; HIJIKATA TOSHIKI |
| 发表日期 | 1990-01-25 |
| 专利号 | JP1990023689A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce astigmatism and to improve output by providing a second semiconductor layer of a second refractive index which is provided on the both sides of a stripe region and a third semiconductor layer of a third refractive index and by providing a specific relationship among a first refractive index, the second refractive index and the third refraction rate. CONSTITUTION:A refractive index n1 of a clad layer 3 which constitutes a stripe region 3a of a width w1 is made higher than a refraction rate n2 of a current blocking layer 2 which is arranged outside. An n-type Gatheta.55Altheta.45As layer 7 is formed on the both sides of the current blocking layer 2. Since an Al mixed crystal rate of the layer 7 is 0.45, it has a refractive index n3 ranging from the refractive index n2 of the current block layer 2 to the refractive index n3 of the clad layer 3. In this way, the current block layer 2 (refractive index n2) and the layer 7 (refractive index n3) are arranged on the both sides of the stripe region 3a (refractive index n1). Since n1>n3>n2, laser beam is wave-guided by waveguide of actual refractive index. Phase delay at a loss area can be thereby reduced effectively and astigmatism can be reduced to almost zero in this way. |
| 公开日期 | 1990-01-25 |
| 申请日期 | 1988-07-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77851]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | YANO MORICHIKA,HAYASHI HIROSHI,HIJIKATA TOSHIKI. Semiconductor laser device. JP1990023689A. 1990-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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