Semiconductor laser
文献类型：专利
| 作者 | KUBOTA HIDESHI; ANDOU TAKASHI; KATSUI AKINORI |
| 发表日期 | 1989-07-05 |
| 专利号 | JP1989169985A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To form all crystal structure to a zincblende shape, and to prevent an effect on the electrical characteristics of an adjacent layer of a mother crystal component by using ZnzMg1-zTe as a P-type semiconductor layer and employing ZnzSexS1-x and ZnyCd1-ySex'S1-x' as an N-type semiconductor layer. CONSTITUTION:A semiconductor laser having double hetero-structure is composed of metallic electrodes 1, 7, an N-GaAs substrate crystal 2, an N-type clad layer 3 consisting of N-ZnyCd1-ySex'S1-x', a Zn SexS1-x active layer 4, a P-type clad layer 8 made up of P-ZnzMg1-zTe and a P-Znz'Mg1-z'Te (where z-GaAs substrate having a surface orientation (100) through an organic metal decomposition vapor phase (MOCVD) method having excellent mass productivity. |
| 公开日期 | 1989-07-05 |
| 申请日期 | 1987-12-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77859]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KUBOTA HIDESHI,ANDOU TAKASHI,KATSUI AKINORI. Semiconductor laser. JP1989169985A. 1989-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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