Semiconductor device
文献类型：专利
| 作者 | MOGI SACHIHIRO; MATSUEDA HIDEAKI |
| 发表日期 | 1987-06-29 |
| 专利号 | JP1987145791A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To provide a semiconductor device in which photo diodes having high monitoring current output efficiency are integrated by forming oblique surfaces on epitaxial regions to become light absorption layers of the photo diodes in a semiconductor laser output direction. CONSTITUTION:A groove 2 of 2-4mum of step difference is formed on a part of a photo diode forming portion of an N-type GaAs substrate Then, an N-type GaAlAs conductive layer 3, an I-type GaAs active layer 4 and a light absorption layer 4', a P-type GaAlAs conductive layer 5 and an N-type GaAs cap layer 5 are sequentially epitaxially grown to form an electrode contacting region 7. A light laser-oscillated by supplying a current I from an electrode 10 of a laser is emitted in directions 13, 14. Here, negative or zero potential is applied to a photo diode electrode 11 to obtain an output current Ipd. Particularly, the angle to the layer 4' with respect to the laser emitting direction becomes approx. 3-5 times as large as previous value by the groove oblique portion 15 of the photo diode to remarkably improve a current output efficiency. |
| 公开日期 | 1987-06-29 |
| 申请日期 | 1985-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77862]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | MOGI SACHIHIRO,MATSUEDA HIDEAKI. Semiconductor device. JP1987145791A. 1987-06-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。