Semiconductor laser
文献类型：专利
| 作者 | YOKOYAMA HIROYUKI; NISHI KENICHI |
| 发表日期 | 1986-10-11 |
| 专利号 | JP1986228692A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a self-pulsating LD characterized by excellent stability and reproducibility, by forming a saturable absorbing region comprising a multiplex quantum well structure of a semiconductor as a unitary body together with the LD. CONSTITUTION:On an N-type GaAs substrate 103, an N-type GaAs buffer layer 104, an N-type Al0.4Ga0.6As clad layer 105, a non-doped Al0.05Ga0.95As active layer 106, a P-type Al0.4Ga0.6As clad layer 107 and a P-type GaAs cap layer 108 are formed by an MO-CVD method. A stripe shaped SiO2 mask is attached on the cap layer 108, and a part other than the stripe part is removed to the substrate 103 by chemical etching. A P-type Al0.4Ga0.6As layer 109 and an N- type Al0.4Ga0.6As layer 110 are grown in embedded manner by the MO-CVD method. After the substrate 103 is lapped to a suitable thickness, electrodes 111 and 111' are evaporated. Then cleavage is formed. On the cleaved plane, which is vertical to the direction of a resonator, a non-doped GaAs layers 112 and non-doped Al0.4Ga0.6As layer 113 are grown. Either of the layers 112 and the layers 113 have 50 layers. A saturable absorbing region 102 is manufactured. |
| 公开日期 | 1986-10-11 |
| 申请日期 | 1985-04-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77864]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YOKOYAMA HIROYUKI,NISHI KENICHI. Semiconductor laser. JP1986228692A. 1986-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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