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文献类型：专利
| 作者 | SUZUKI TOORU |
| 发表日期 | 1991-12-16 |
| 专利号 | JP1991078792B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a green visible light laser by holding an active layer consisting of a direct transition type substance, film thickness thereof is approximately the same as a de Broglie wavelength of carriers, by plural layers, conductivity thereof differs to each other, and lattice-aligning the active layer on a substrate. CONSTITUTION:A ZnSwTe1-w layer 2, conditions for lattice-alignment thereof are very excellent and a band gap thereof is large, is crystal-grown on an N type GaAs substrate 1 in the thickness of approximately 2-3mum, and an active layer 3 consisting of direct transition type (AlxGa1-x)y In1-yPzAs1-z (0<=x, y, z<=1), film thickness thereof is approximately the same as a de Broglie wavelength of carriers, is formed on the layer 2 through a molecular-beam epitaxial method. A layer 4 of the qualiy of a material the same as the layer 2 is formed in the thickness of approximately 2-3mum, an N type GaAs layer 5 is formed in approximately 1mum, and a P type impurity is diffused in the width of approximately 5mum in a striped shape to form a diffusion layer 6. Then, ohmic electrodes 7, 8 are formed. |
| 公开日期 | 1991-12-16 |
| 申请日期 | 1983-01-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77866]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | SUZUKI TOORU. -. JP1991078792B2. 1991-12-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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