Manufacture of semiconductor laser
文献类型：专利
| 作者 | FURUMIYA SATOSHI |
| 发表日期 | 1984-06-22 |
| 专利号 | JP1984108387A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To realize the manufacturing method of the titled semiconductor laser with a resonator short in length, which performs the formation of the end surfaces of the resonator applying a cleavage method by a method wherein double hetero structure parts are protruded in an eaves-form and, after that, the protruded parts are cleaved. CONSTITUTION:A protective film at a region forming the end surfaces of a resonator is selectively removed for forming groove-shaped apertures on the protective film and, by using this mask, an epitaxial layer 9' including double hetero structure parts consisting of an lower clad layer 4', an active layer 5' and an upper clad layer 6 is removed for forming groove-shaped apertures which are attained up to a substrate 1 and the substrate only is performed an under etching in the horizontal direction through the intermediary of the apertures for forming eaves-form protruded parts for the epitaxial layer 9'. Then, the substrate 1 only is performed an under etching in the horizontal direction with a mixed aqueous solution comprising HF and HBr for obtaining apertures 10'' protruding in an eaves-form from the epitaxial layer 9'. In addition, both sides of the double hetero structure parts are performed an etching up to reach the substrate 1 and, lastly, the epitaxial layer 9' including the double hetero structure parts is cleaved along the surfaces of broken lines 11'. |
| 公开日期 | 1984-06-22 |
| 申请日期 | 1982-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77868]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | FURUMIYA SATOSHI. Manufacture of semiconductor laser. JP1984108387A. 1984-06-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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