Semiconductor laser
文献类型：专利
| 作者 | MINAGAWA SHIGEKAZU; SATO MAKOTO; KONDO MASAHIKO; UCHIDA KENJI |
| 发表日期 | 1989-06-01 |
| 专利号 | JP1989140789A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a planar type semiconductor laser having high yield, low cost and high reliability by specifying the width of a clad layer of the laser by an ion implantation, and further specifying a current path of narrower width than that of the clad layer. CONSTITUTION:A clad layer of a semiconductor laser is partly or all formed of a superlattice crystal, ions are implanted to the superlattice layer except a section which becomes an optical guide layer, and then heat treated to disorder the superlattice. Thus, the superlattice crystal position which is not disordered is operated as the optical guide layer. Then, the clad layer is ion implanted except the top of the optical guide layer to form it semi-insulating, thereby forming a current block layer. Thus, since a laser can be formed by a simple photolithography and an ion implantation, the steps can be simplified and the yield can be improved. |
| 公开日期 | 1989-06-01 |
| 申请日期 | 1987-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77870]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MINAGAWA SHIGEKAZU,SATO MAKOTO,KONDO MASAHIKO,et al. Semiconductor laser. JP1989140789A. 1989-06-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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