Semiconductor laser device and its manufacture
文献类型：专利
| 作者 | NEMOTO KAZUHIKO |
| 发表日期 | 1992-08-06 |
| 专利号 | JP1992216691A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and its manufacture |
| 英文摘要 | PURPOSE:To evade the deterioration of characteristics occurring by etching and the like, simplify and make reliable the manufacturing, and improve productivity, by using a structure formed by one time epitaxial growth, in a so-called surface light emission semiconductor laser device which outputs light vertically to a substrate. CONSTITUTION:A planar equilateral triangle mesa protrusion 2 whose sides 2a, 2b, 2c are in the specified crystal axis directions is formed on the {111} A face 1A of a GaAs compound semiconductor substrate A regular tetrahedron compound semiconductor lamination part 10, which is surrounded by a {111} B face through an MOCVD method, is formed on the mesa protrusion 2 by one time epitaxial growth. Hence a semiconductor laser device wherein surface light emission from an active layer 6 of the compound semiconductor lamination part 10 is performed and its manufacturing method are obtained. |
| 公开日期 | 1992-08-06 |
| 申请日期 | 1990-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77891]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | NEMOTO KAZUHIKO. Semiconductor laser device and its manufacture. JP1992216691A. 1992-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。