Manufacture of semiconductor laser device
文献类型：专利
| 作者 | OTAKI KANAME; SHIMA AKIHIRO; TAKAMI AKIHIRO |
| 发表日期 | 1989-04-18 |
| 专利号 | JP1989099276A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To perform selective etching for the difference of small AlAs composition ratio and to form a burying window with good controllability by employing etchant responsive to the AlAs composition of a layer to be etched. CONSTITUTION:When a burying window pattern is formed on a photoresist 9 and with it as a mask an N-type GaAs contact layer 6 is etched with mixture solution of hydrogen peroxide water: ammonia water =20:1, the etching is stopped on the surface of an N-type AlGaAs upper clad layer 5. Then, after the resist 9 is removed, with the layer 6 as a mask the layer 5 is etched with mixture solution of hydrofluoric acid: ammonium fluoride=3: In this case, the etching is stopped on the surface of an A GaAs active layer 4. Then, the layer 4 is etched with mixture solution of hydrogen peroxide water : tartaric acid=12: In this case, the etching is stopped on the surface of an AlGaAs photoconductive layer 3. Eventually, an opening is buried with an AlGaAs layer 7, and cleaved. |
| 公开日期 | 1989-04-18 |
| 申请日期 | 1987-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77907]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTAKI KANAME,SHIMA AKIHIRO,TAKAMI AKIHIRO. Manufacture of semiconductor laser device. JP1989099276A. 1989-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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