Manufacture of semiconductor laser
文献类型：专利
| 作者 | KAWADA SEIJI |
| 发表日期 | 1991-02-08 |
| 专利号 | JP1991030389A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To make it possible to manufacture a semiconductor laser in the number of fewer processes by a method wherein an N-type current constricting layer of a thinness lower than the height of an inverted mesa part is formed using a dielectric film as a mask by an organometallic thermal decomposition vapor growth method (MOVPE). CONSTITUTION:A crystal is grown on a semiconductor substrate 1 having an inverted mesa structure by an MOVPE. In this case, the growth rate of the crystal on the side surfaces of the inverted mesa becomes extremely slow to that on the surface of the substrate Moreover, a P-type dopant, such as Zn, Mg or the like, is diffused during the crystal growth. Accordingly, at a point of time when an N-type current constricting photoabsorption layer 6 of a thinness lower than the height of the inverted mesa part is formed, a very thin N-type layer is formed on the side surfaces of the inverted mesa ranging from the surface of this layer 6 to the top of the inverted mesa. Moreover, when a P-type cap layer 5 having a carrie concentration higher than that of this layer 6 is selectively piled on a part other than the mesa, the P-type dopant thrusts through the very thin N-type layer on the mesa side surfaces to diffuse, this layer is inverted into a P-type layer and the whole surface of an epitaxial layer is turned into a P-type layer. Thereby, the need of the formation of the cap layer and a diffusion process of Zn, which are performed by a third growth, is eliminated. |
| 公开日期 | 1991-02-08 |
| 申请日期 | 1989-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77915]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KAWADA SEIJI. Manufacture of semiconductor laser. JP1991030389A. 1991-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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