Bistable semiconductor laser
文献类型:专利
作者 | ODAKAWA TETSUSHI; YAMAGOSHI SHIGENOBU |
发表日期 | 1990-02-28 |
专利号 | JP1990060182A |
著作权人 | FUJITSU LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Bistable semiconductor laser |
英文摘要 | PURPOSE:To enable the control of the relation between the wavelength of a set light and the resonating wavelength so as to make the set light small in intensity by a method wherein a resonator length control layer is provided onto a lower clad layer being in contact with an active layer formed thereon, and the optical waveguides of them are provided to the same axis. CONSTITUTION:An active layer 22 consisting of a second semiconductor layer, whose a forbidden bandwidth is larger than that of a first semiconductor, is provided onto a region of the surface of a lower clad layer 21 which consists of the first semiconductor of a certain conductivity type, and a resonator length control layer 28 consisting of a third semiconductor layer, whose forbidden bandwidth is larger than that of the second semiconductor, is provided onto the other region of the surface of the clad layer 31 touching the other region. Next, a first upper clad layer 23 consisting of a fourth semiconductor layer, whose forbidden bandwidth is smaller than that of the second semiconductor, is formed on the active layer 22, and a second upper clad layer 29 consisting of a fifth semiconductor layer, whose forbidden bandwidth is smaller than that of the third semiconductor, is provided onto the resonator length control layer 28. By this structure, the length of a resonator can be adjusted independently of the width of the hysteresis of an optical output which bases on a bias current, so that the intensity of a set light call be made small. |
公开日期 | 1990-02-28 |
申请日期 | 1988-08-26 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/77922] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | ODAKAWA TETSUSHI,YAMAGOSHI SHIGENOBU. Bistable semiconductor laser. JP1990060182A. 1990-02-28. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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