Surface emitting type semiconductor laser
文献类型：专利
| 作者 | OGURA MUTSURO; SHIMADA KATSUTO |
| 发表日期 | 1991-07-03 |
| 专利号 | JP1991155692A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting type semiconductor laser |
| 英文摘要 | PURPOSE:To minimize the leakage of light, obtain a large optical output with a little drive current, and obtain a stabilized surface emitting type semiconductor in lateral made by installing embedded layer which comprises a semiconductor whose band gap is larger than an active layer around an optical resonator, a first electrode to the back of a semiconductor substrate, and a second substrate to the upper part of the embedded layer. CONSTITUTION:A laser resonator comprises an active layer 103, a lower part reflection layer 102 laid out on both sides, and an upper part reflection layer 104. An embedded layer comprises a p type Al0.4Ga0.6As layer 105, and n type Al0.4Ga0.6As layer, a p type Al0.4Ga0.6As layer 107, and a p type GaAs layer 108, and buried the periphery of laser resonator completely. A first electrode 110 is formed on the rear of an n type GaAs substrate 101 while a second electrode 109 is formed on the upper part of the embedded layer. The embedded layer which excludes the p type GaAs layer 108 is formed by an Al0.4Ga0.6As layer. A band gap is larger than the p type GaAs active layer 103 and carriers are effectively confined in the active layer 103. The refractive index of the embedded layer is smaller than that of the resonator section. Therefore, the light is confined in the resonator section, thereby forming an effective optical waveguide channel. |
| 公开日期 | 1991-07-03 |
| 申请日期 | 1990-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77925]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | OGURA MUTSURO,SHIMADA KATSUTO. Surface emitting type semiconductor laser. JP1991155692A. 1991-07-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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