Manufacture of semiconductor laser
文献类型：专利
| 作者 | NOGUCHI HIDEAKI |
| 发表日期 | 1985-07-01 |
| 专利号 | JP1985123086A |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To cut a laser array element into several laser element without deteriorating characteristics by scribing only a substrate-side surfce separate from side surfaces for mirror surfaces by specific size or more by a scribing point in parallel with scribing among striped light-emitting regions and light-emitting regions for the laser array element and dividing the laser array element into several semiconductor laser element. CONSTITUTION:A bar shaped semiconductor laser array element 21 to which mirror surfaces 15, 16 for feeding back beams through cleavage is scribed by a scribing point 35 only in sections 34 separate from the side surfaces 15, 16 for mirror surfaces of a substrate-side surface 33 by 10mum or more among striped light-emitting regions 31 and adjacent light-emitting regions 32, and cut into each semiconductor laser element 36. It is important that the semiconductor laser array element must be cut by using the scribing point in the first point, only the substrate-side surfaces 34 must be scribed by the scribing point and the side surfaces of epitaxial growth layers 13, 14 need not be scribed in the second point and substrate-side surface 37 sections within 10mum from the side surfaces for the mirror surfaces need not be scribed in the third point at that time. |
| 公开日期 | 1985-07-01 |
| 申请日期 | 1983-12-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77933]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | NOGUCHI HIDEAKI. Manufacture of semiconductor laser. JP1985123086A. 1985-07-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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