Semiconductor laser device
文献类型：专利
| 作者 | SAMONJI, KATSUYA; TAKAYAMA, TORU; IMAFUJI, OSAMU; YURI, MASAAKI |
| 发表日期 | 2005-06-21 |
| 专利号 | US6909733 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of Alx1Ga1−x1As and a p-type cladding layer of (AlxGa1−x)yIn1−yP for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output. |
| 公开日期 | 2005-06-21 |
| 申请日期 | 2001-10-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77946]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | SAMONJI, KATSUYA,TAKAYAMA, TORU,IMAFUJI, OSAMU,et al. Semiconductor laser device. US6909733. 2005-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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