Semiconductor laser
文献类型：专利
| 作者 | YAGI KATSUMI |
| 发表日期 | 1992-11-25 |
| 专利号 | JP1992337686A |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To perform a high current operation by so forming 4 quantum well structure in which a well layer is made of InGaAs and a barrier layer is made of GaAs as to perform a function of a light absorption layer. CONSTITUTION:In a semiconductor laser having an active layer 5 made of InGaAs and a light absorption layer 9 for forming an optical waveguide on an active layer 5, the layer 9 has a quantum well structure in which a well layer is made of InGaAs for allowing absorption of a light generated from the layer 5 and a barrier layer is made of GaAs. Thus, heat radiation of an element is improved, and an InGaAs-based semiconductor laser which can perform a high current operation, can be obtained. |
| 公开日期 | 1992-11-25 |
| 申请日期 | 1991-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77954]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | YAGI KATSUMI. Semiconductor laser. JP1992337686A. 1992-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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