Semiconductor laser element
文献类型：专利
| 作者 | HAYASHI HIROSHI; KANEIWA SHINJI; MIYAUCHI NOBUYUKI; MORIMOTO TAIJI; KASAI SHUSUKE |
| 发表日期 | 1990-10-15 |
| 专利号 | JP1990254784A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To enable a semiconductor layer element to operate stably at a high optical output power for a long period without deteriorating an outgoing beam in circularity by a method wherein the thickness of an optical guide layer is made small near the end face of a resonator and large at the center. CONSTITUTION:Optical guide layers 14 and 16 whose refractive indexes are intermediate between those of an active layer 15 and clad layers 13 and 17 are provided between the active layer 15 and the clad layers 13 and 17 respectively, and the optical guide layers 14 and 16 are made thick at the center of a resonator and thin near the end faces of the resonator. Therefore, Joule heat is restrained from being induced by a laser ray oscillating current near the center of the resonator, and naturally emitted light is also restrained, therefore heat induced by the naturally emitted light is restrained. On the other hand, a beam is prevented from deteriorating in circularity near the end faces of the resonator, and light can be lessened in density inside the active layer 15. By this setup, a semiconductor laser element of this design can operate at a high output power for a long period without degrading a beam in circularity. |
| 公开日期 | 1990-10-15 |
| 申请日期 | 1989-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77963]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | HAYASHI HIROSHI,KANEIWA SHINJI,MIYAUCHI NOBUYUKI,et al. Semiconductor laser element. JP1990254784A. 1990-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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