Semiconductor laser element
文献类型：专利
| 作者 | KIMURA SOUICHI; SERIZAWA AKIMOTO |
| 发表日期 | 1985-02-21 |
| 专利号 | JP1985034090A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a stable oscillation mode having an extremely low threshold and high efficiency by growing a semiconductor layer having a conduction type reverse to a substrate between the substrate and a double hetero-junction layer so as to be disconnected at the central section of a groove. CONSTITUTION:A P type InP blocking layer 11 is grown on an N type InP substrate 10 to which a groove 10a is formed so as to be disconnected at the central section of the groove. An N type InP buffer layer 12, an N type InGaAsP active layer 13, a P type InP clad layer 14 and a P type InGaAsP contact layer are grown in an epitaxial manner in succession. According to such constitution, currents flow only through the disconnected section of the layer 11, currents also concentrate in a fine region in the active region of the layer 13 grown on the layer 11, and a semiconductor laser element having extremely low threshold can be obtained. |
| 公开日期 | 1985-02-21 |
| 申请日期 | 1983-08-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77969]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | KIMURA SOUICHI,SERIZAWA AKIMOTO. Semiconductor laser element. JP1985034090A. 1985-02-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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