Semiconductor laser
文献类型：专利
| 作者 | SUZUKI YASUHIRO; MIKAMI OSAMU |
| 发表日期 | 1991-02-18 |
| 专利号 | JP1991036779A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To increase an extinction ratio and to decrease a power consumption by providing a stripe-form active layer which is a waveguide consisting of a semiconductor crystal of superlattice structure, a clad region adjacent to said stripe-form active layer consisting of a semiconductor crystal in which a superlattice is made into a mixed crystal, and the stripe-form waveguide of a semiconductor laser having the stripe-form in which an input terminal and an output terminal are not in a straight line. CONSTITUTION:A substrate 1 consists, for example, of an N-type GaAs substrate. An N-type lower clad layer 2 consists of AlxGa1-xAs having a lower refractive index than the GaAs substrate and it is doped with Si to about 10/cm so as to make it an N-type semiconductor. An active layer 3 of semiconductor lase is composed of a superlattice layer of a repeating structure of thin layers of GaAs and AlyGa1-yAs. A partly mixed crystal superlattice 4 is formed which is the super-lattice of the same structure as the active layer made into a mixed crystal partly. An upper clad layer 5 of P-type consists of AlzGa1-zAs and is doped with Be to 10/cm so as to make it a P-type semiconductor. A cap layer 6 consisting of GaAs and a P-type ohmic electrode 7 are arranged and an N-type ohmic electrode 8 is formed on rear side of the substrate. |
| 公开日期 | 1991-02-18 |
| 申请日期 | 1989-07-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77986]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | SUZUKI YASUHIRO,MIKAMI OSAMU. Semiconductor laser. JP1991036779A. 1991-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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