Manufacture of semiconductor laser
文献类型：专利
| 作者 | HAMAO NOBORU |
| 发表日期 | 1990-08-01 |
| 专利号 | JP1990194587A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form an embedded structure without reducing light-emitting efficiency and obtain a semiconductor laser with a small contact resistance with an electrode by diffusion impurities into only the bottom part of a mesa stripe and putting a quantum well active layer of this region into disorder selectively. CONSTITUTION:An n-type clad layer 2, an n-type guide layer 3, an active layer 4, a P-type guide layer 5, a P-type clad layer 6, and a P-type cap layer 2 are subjected to crystal growth on an n-type GaAs substrate 1, a mask 8 is formed, and then a mesa stripe 9 is formed with it as a mask. Then, an Si film 10 is deposited and then a protection film 11 on diffusion is deposited. Then. the Si film 10 and the protection film 11 are eliminated, heat treatment is performed, and then Si diffusion is made. At this time, since the Si film 10 is located only at the bottom part of the mesa stripe 9, an Si diffusion region 12 is formed only at this location. thus putting quantum well of the active layer 4 of this region into disorder and forming an embedded structure. |
| 公开日期 | 1990-08-01 |
| 申请日期 | 1989-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77988]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HAMAO NOBORU. Manufacture of semiconductor laser. JP1990194587A. 1990-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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