Manufacture of semiconductor element
文献类型：专利
| 作者 | YOSHITOSHI KEIICHI |
| 发表日期 | 1987-02-25 |
| 专利号 | JP1987043194A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor element |
| 英文摘要 | PURPOSE:To prevent occurrence of damages and the like due to heat in a semiconductor layer, which is already formed on a substrate, when an embedded type semiconductor laser is manufactured, by forming the semiconductor layer corresponding to an embedded layer at a lower temperature than the conventional temperature by dissolving regrowing. CONSTITUTION:On a cap layer 13 and a high-melting-point material layer 14, an unsaturated semiconductor solution 15 comprising a component included in layers 8 and 10-13, e.g., gallium, is attached by an LPE method or a molecular beam epitaxial growing method. The device is heated to 400-550 deg.C. Both end parts of the layers 8 and 10-13 other than the parts beneath a high-melting-point material layer 14 undergo dissolving regrow. Thus an embedded layer 16 as another semiconductor layer comprising Ga1-xAlxAs(0.14 |
| 公开日期 | 1987-02-25 |
| 申请日期 | 1985-08-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77992]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YOSHITOSHI KEIICHI. Manufacture of semiconductor element. JP1987043194A. 1987-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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