Manufacture of semiconductor device
文献类型：专利
| 作者 | FUKUDA HIROKAZU; SHINOHARA KOUJI; NISHIJIMA YOSHITO; EBE KOUJI |
| 发表日期 | 1985-09-07 |
| 专利号 | JP1985173894A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To obtain buried type lasers with no variation in oscillation wavelength, no lattice-unmatching, and no increase in threshold current by a method wherein the temperature of crystal growth at the time of forming a buried layer by covering a double hereto junction is made smaller than the temperature of crystal deposition at the time of forming a double hetero junction by liquid epitaxial growth. CONSTITUTION:A substrate 28 with a double hetero junction formed at the mesa stripe part is loaded on a substrate heater 29 held at 350 deg.C. PbTe1-ySey crystal grains are put in a crystal container 21 made of quartz as a crystal 26, and then heated to a temperature of crystal sublimantion at 500-600 deg.C by means of a crystal heater 24. As an impurity 27, bismuth in the case of n type and thallium in the case of p type are put in an impurity container 22 made of quartz and heated to 400 deg.C by means of an impurity heater 25. Sublimated crystal molecules mix with the impurity by a reserver 23 and go out of its holes, leading to gradual deposition on the substrate 28. In such a manner, PbTe1-ySey are deposited by about 1mum by 60min growth as a buried layer. Finally, a semiconductor laser is completed by adhering Au electrodes on the front and back of the substrate thus obtained. |
| 公开日期 | 1985-09-07 |
| 申请日期 | 1984-02-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77996]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | FUKUDA HIROKAZU,SHINOHARA KOUJI,NISHIJIMA YOSHITO,et al. Manufacture of semiconductor device. JP1985173894A. 1985-09-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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