Manufacture of semiconductor laser
文献类型：专利
| 作者 | UEDA OSAMU |
| 发表日期 | 1985-02-21 |
| 专利号 | JP1985034064A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To lengthen the life of a semiconductor laser by superposing epitaxial layers on a GaAs substrate in a multilayer shape, thickening a last GaAs layer and removing the substrate and a Ga1-xAlxAs layer on the substrate through etching. CONSTITUTION:Ga1-xAlxAs (x>=0.4) 12, P-GaAs 13 and N-GaAs 14 are formed on a GaAs substrate 11 in an epitaxial manner, an SiO2 mask 15 with a stripped opening 15A in predetermined width is executed, and a striped groove 16 reaching to depth on its midway of the layer 13 from the surface of the layer 14 is formed by a mixed liquid of H2SO4+H2O2+H2O. The groove 16 is buried with P-Ga1-xAlxAs 17, the thickness of sections except the groove is brought to approximately 0.5mum, and an N-Ga1-xAlxAs active layer 18 and N-GaAs 20 are superposed. The substrate 11 and the layer 12 are removed through etching in succession, and electrodes 21, 22 are attached. According to the constitution, compressive stress applied to both end edges of stripes particularly corresponding to the striped groove of the active layer 18 is inverted, rather slight tensile stress is applied, and internal strain stored in the active layer is reduced, thus lengthening the life of a device. |
| 公开日期 | 1985-02-21 |
| 申请日期 | 1983-08-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78001]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | UEDA OSAMU. Manufacture of semiconductor laser. JP1985034064A. 1985-02-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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