半導体レ—ザ装置
文献类型：专利
| 作者 | 小野 佑一; 茅根 直樹; 中塚 慎一; 梶村 俊 |
| 发表日期 | 1996-04-30 |
| 专利号 | JP2515725B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ—ザ装置 |
| 英文摘要 | PURPOSE:To reduce noises and astigmatism by making the difference between width on the inside of a semiconductor layer larger then that in the end surface of the semiconductor layer and a section in the vicinity of the end surface. CONSTITUTION:N-type CaAlAs clad layers 2, undoped GaAlAs active layers 3, P-type GaAlAs clad layers 4 and N-type current constriction layers 5 are formed onto N-type GaAs substrates 1 in succession, and grooves 6 and 7 are shaped to the current constriction layers 5 by using a chemical etching method. The upper width of the groove 6 extends over 6-6mum and the upper width of the groove 7 over 8-10mum, and the width of the grooves of residual GaAs layers extends over 2-5mum. P-type GaAlAs clad layers 8 and P type GaAS cap layers 9 are shaped successively, and Cr-Au electrodes 10 and AuGe/Ni/Au electrodes 11 are evaporated and formed. The astigmatism of the semiconductor laser is reduced as 5mum or less, laser beams are changed into a multimode in the active layers, and relative noise strength by return beams extends over 1X10Hz or less. Accordingly, the performance of a device apparatus can be improved and size thereof may be miniaturized and cost thereof reduced. |
| 公开日期 | 1996-07-10 |
| 申请日期 | 1985-06-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78004]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 小野 佑一,茅根 直樹,中塚 慎一,等. 半導体レ—ザ装置. JP2515725B2. 1996-04-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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