Semiconductor laser device
文献类型：专利
| 作者 | SHIMADA JUNICHI; TSUZUKI NOBUYORI; NAKANO YOSHINORI |
| 发表日期 | 1989-10-24 |
| 专利号 | JP1989266778A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the light detection efficiency by forming the light emitting side end surface of a light detecting part so as to form a Brewster's angle with a laser beam entering the light detecting part. CONSTITUTION:A lower cladding layer 6, an active layer 7, an upper cladding layer 8, buried layers 9 and 10 for current blocking and ohmic electrodes 1-3 are formed on a substrate 5. A separation trench reaching the lower cladding layer 6 is formed to separate a light emitting part from a light detecting part. The end surface 4 of the light detecting part is so formed as to form a Brewster's angle alphaB with an incident laser beam, thus making the reflectance at the end surface 4 zero. With this constitution, the light detection efficiency can be improved so that the deterioration of the light emitting characteristics can be suppressed. |
| 公开日期 | 1989-10-24 |
| 申请日期 | 1988-04-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78009]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SHIMADA JUNICHI,TSUZUKI NOBUYORI,NAKANO YOSHINORI. Semiconductor laser device. JP1989266778A. 1989-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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