Manufacture of semiconductor device
文献类型：专利
| 作者 | TAKEUCHI TATSUYA |
| 发表日期 | 1992-12-15 |
| 专利号 | JP1992361585A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To enable the buried layer of a semiconductor laser to be made flat by a method wherein a first buries layer is made to grow on both the sides of a mesa through an MOVPE method, and then a second buried layer is grown through an LPE method. CONSTITUTION:A guide layer 2, and active layer 3, a clad layer 4, and a contact layer 5 are successively grown on a semiconductor substrate A selective etching and selective growth mask 6 of SiO2 is formed on the contact layer 5. The layers 2, 3, 4, and 5 are etched using the mask 6 as an etching mask into a mesa shape. Then, an Fe-doped InP buried layer 7 of high resistance is made to grow using the mask 6 as a growth mask through metal organic vapor phase epitaxy (MOVPE). Then, using the mask 6 as a growth mask, an Fe-doped InP buried layer 8 of high resistance is growth through liquid phase epitaxy (LPE). By this setup, a flat buried layer of high resistance can be obtained. |
| 公开日期 | 1992-12-15 |
| 申请日期 | 1991-06-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78019]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TAKEUCHI TATSUYA. Manufacture of semiconductor device. JP1992361585A. 1992-12-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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