Semiconductor laser
文献类型：专利
| 作者 | NIINA TATSUHIKO; YAMAGUCHI TAKAO; YOSHITOSHI KEIICHI |
| 发表日期 | 1985-12-16 |
| 专利号 | JP1985254689A |
| 著作权人 | SANYO ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the yield by reducing the number of processes by a method wherein a non-doped ZnSe single crystal is laminated and removed only in the groove part, thus forming a current stricture layer of desired shape is formed, and a cap layer is formed thereon. CONSTITUTION:The first clad layer 2, an active layer 3, and the second clad layer 4 are successively laminated on a substrate 1, and a non-doped ZnSe single crystal 6 is laminated on the layer 4. Next, the current stricture layer 6 of desired shape is formed by removing only the ZnSe single crystal above the groove. Then, the cap layer 5 made of P type GaAs is formed on the surfaces of the second clad layer 4 and the current stricture layer 6. Finally, the first and second electrodes are formed. |
| 公开日期 | 1985-12-16 |
| 申请日期 | 1984-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78037]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | NIINA TATSUHIKO,YAMAGUCHI TAKAO,YOSHITOSHI KEIICHI. Semiconductor laser. JP1985254689A. 1985-12-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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